Please use this identifier to cite or link to this item:
https://doi.org/10.1116/1.3025909
DC Field | Value | |
---|---|---|
dc.title | Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain | |
dc.contributor.author | Gao, F. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-06-17T02:48:18Z | |
dc.date.available | 2014-06-17T02:48:18Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Gao, F., Lee, S.J., Kwong, D.L. (2009). Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27 (1) : 214-217. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3025909 | |
dc.identifier.issn | 10711023 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55890 | |
dc.description.abstract | By using thin AlN film as a passivation layer between the GaAs and Hf O2, GaAs metal-oxide-semiconductor (MOS) devices exhibited well-behaved accumulation and inversion capacitance-voltage characteristics with low leakage current of 6× 10-5 A cm2 at Vg =1 V and interface state density of ∼4.9× 1010 cm-2 eV-1. In order to improve the N+ source/drain activation efficiency, the SiP coimplantation technique was adapted to fabricate GaAs n -type metal-oxide-semiconductor field-effect-transistor (MOSFET). High quality N+ P GaAs junction was achieved with extremely low junction leakage current of 3× 10-6 A cm2 at reverse bias of 1 V and high forward current to reverse current ratio of Iforward Ireverse ∼ 107 at GaAs source/drain junction. GaAs n -MOSFETs integrated with Hf O2 gate dielectric and TaN gate electrode were fabricated by using AlN passivation layer and SiP coimplantation techniques. The results show that our GaAs n -MOSFETs operate in enhancement mode with Ion Ioff ratio of approximately six orders and good transfer and output characteristics. © 2009 American Vacuum Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.3025909 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1116/1.3025909 | |
dc.description.sourcetitle | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | |
dc.description.volume | 27 | |
dc.description.issue | 1 | |
dc.description.page | 214-217 | |
dc.description.coden | JVTBD | |
dc.identifier.isiut | 000265839000041 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.