Please use this identifier to cite or link to this item: https://doi.org/10.1002/mmce.20066
Title: Detailed analysis of high-quality symmetrical octagonal spiral inductors on Si substrate
Authors: Ooi, B.-L. 
Xu, D.-X.
Keywords: Center-tap underpass
Electrical and magnetic center
Mutual inductance
Quality factor
Self-inductance
Issue Date: Mar-2005
Source: Ooi, B.-L., Xu, D.-X. (2005-03). Detailed analysis of high-quality symmetrical octagonal spiral inductors on Si substrate. International Journal of RF and Microwave Computer-Aided Engineering 15 (2) : 181-186. ScholarBank@NUS Repository. https://doi.org/10.1002/mmce.20066
Abstract: Research studies of symmetrical spiral inductors for silicon technology have become very important and challenging. In this article, we attempt to give a detailed explanation of how symmetrical spiral inductors help to improve the quality factor (Q) as compared to conventional nonsymmetrical inductors. The experimental results are presented to verify our theory. © 2005 Wiley Periodicals, Inc.
Source Title: International Journal of RF and Microwave Computer-Aided Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/55596
ISSN: 10964290
DOI: 10.1002/mmce.20066
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