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|Title:||Detailed analysis of high-quality symmetrical octagonal spiral inductors on Si substrate|
|Authors:||Ooi, B.-L. |
Electrical and magnetic center
|Citation:||Ooi, B.-L., Xu, D.-X. (2005-03). Detailed analysis of high-quality symmetrical octagonal spiral inductors on Si substrate. International Journal of RF and Microwave Computer-Aided Engineering 15 (2) : 181-186. ScholarBank@NUS Repository. https://doi.org/10.1002/mmce.20066|
|Abstract:||Research studies of symmetrical spiral inductors for silicon technology have become very important and challenging. In this article, we attempt to give a detailed explanation of how symmetrical spiral inductors help to improve the quality factor (Q) as compared to conventional nonsymmetrical inductors. The experimental results are presented to verify our theory. © 2005 Wiley Periodicals, Inc.|
|Source Title:||International Journal of RF and Microwave Computer-Aided Engineering|
|Appears in Collections:||Staff Publications|
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