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Please use this identifier to cite or link to this item: https://doi.org/10.1002/mmce.20066
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dc.titleDetailed analysis of high-quality symmetrical octagonal spiral inductors on Si substrate
dc.contributor.authorOoi, B.-L.
dc.contributor.authorXu, D.-X.
dc.date.accessioned2014-06-17T02:44:53Z
dc.date.available2014-06-17T02:44:53Z
dc.date.issued2005-03
dc.identifier.citationOoi, B.-L., Xu, D.-X. (2005-03). Detailed analysis of high-quality symmetrical octagonal spiral inductors on Si substrate. International Journal of RF and Microwave Computer-Aided Engineering 15 (2) : 181-186. ScholarBank@NUS Repository. https://doi.org/10.1002/mmce.20066
dc.identifier.issn10964290
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55596
dc.description.abstractResearch studies of symmetrical spiral inductors for silicon technology have become very important and challenging. In this article, we attempt to give a detailed explanation of how symmetrical spiral inductors help to improve the quality factor (Q) as compared to conventional nonsymmetrical inductors. The experimental results are presented to verify our theory. © 2005 Wiley Periodicals, Inc.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/mmce.20066
dc.sourceScopus
dc.subjectCenter-tap underpass
dc.subjectElectrical and magnetic center
dc.subjectMutual inductance
dc.subjectQuality factor
dc.subjectSelf-inductance
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/mmce.20066
dc.description.sourcetitleInternational Journal of RF and Microwave Computer-Aided Engineering
dc.description.volume15
dc.description.issue2
dc.description.page181-186
dc.description.codenIJMEF
dc.identifier.isiut000227668300006
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