Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2009.2016396
| Title: | Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations | Authors: | Zhao, H. Rustagi, S.C. Ma, F.-J. Samudra, G.S. Singh, N. Lo, G.Q. Kwong, D.-L. |
Keywords: | Charge-based capacitance measurement (CBCM) technique Nanoscale devices Nanowire MOSFETs Sub-femtofarad capacitance measurements Transient TCAD simulations |
Issue Date: | 2009 | Citation: | Zhao, H., Rustagi, S.C., Ma, F.-J., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L. (2009). Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations. IEEE Transactions on Electron Devices 56 (5) : 1157-1160. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2016396 | Abstract: | In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified. © 2009 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/55287 | ISSN: | 00189383 | DOI: | 10.1109/TED.2009.2016396 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.