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Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2016396
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dc.titleCharge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations
dc.contributor.authorZhao, H.
dc.contributor.authorRustagi, S.C.
dc.contributor.authorMa, F.-J.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorSingh, N.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-06-17T02:41:21Z
dc.date.available2014-06-17T02:41:21Z
dc.date.issued2009
dc.identifier.citationZhao, H., Rustagi, S.C., Ma, F.-J., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L. (2009). Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations. IEEE Transactions on Electron Devices 56 (5) : 1157-1160. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2016396
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55287
dc.description.abstractIn this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2009.2016396
dc.sourceScopus
dc.subjectCharge-based capacitance measurement (CBCM) technique
dc.subjectNanoscale devices
dc.subjectNanowire MOSFETs
dc.subjectSub-femtofarad capacitance measurements
dc.subjectTransient TCAD simulations
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2009.2016396
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume56
dc.description.issue5
dc.description.page1157-1160
dc.description.codenIETDA
dc.identifier.isiut000265712400062
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