Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2016396
Title: Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations
Authors: Zhao, H.
Rustagi, S.C.
Ma, F.-J. 
Samudra, G.S. 
Singh, N.
Lo, G.Q.
Kwong, D.-L.
Keywords: Charge-based capacitance measurement (CBCM) technique
Nanoscale devices
Nanowire MOSFETs
Sub-femtofarad capacitance measurements
Transient TCAD simulations
Issue Date: 2009
Source: Zhao, H., Rustagi, S.C., Ma, F.-J., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L. (2009). Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations. IEEE Transactions on Electron Devices 56 (5) : 1157-1160. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2016396
Abstract: In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/55287
ISSN: 00189383
DOI: 10.1109/TED.2009.2016396
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