Please use this identifier to cite or link to this item: https://doi.org/10.1109/MNANO.2013.2260461
Title: A bistable silicon nanofin: An ideal device for nonvolatile memory applications
Authors: Soon, B.W.
Singh, N.
Tsai, J.M.
Lee, C. 
Issue Date: 2013
Source: Soon, B.W.,Singh, N.,Tsai, J.M.,Lee, C. (2013). A bistable silicon nanofin: An ideal device for nonvolatile memory applications. IEEE Nanotechnology Magazine 7 (2) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1109/MNANO.2013.2260461
Abstract: We present a silicon nanofin (Si-NF) that can be actuated bidirectionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force, which holds the Si-NF to either terminal without an on-hold bias, thus exhibiting bistable hysteresis behavior. The measured pull-in voltage (VPI) and reset voltage (VRESET) are 10 and -12 V, respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, it can be an ideal device for nonvolatile memory (NVM) applications. © 2007-2011 IEEE.
Source Title: IEEE Nanotechnology Magazine
URI: http://scholarbank.nus.edu.sg/handle/10635/53909
ISSN: 19324510
DOI: 10.1109/MNANO.2013.2260461
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