A bistable silicon nanofin: An ideal device for nonvolatile memory applications

Please use this identifier to cite or link to this item: https://doi.org/10.1109/MNANO.2013.2260461

Title:	A bistable silicon nanofin: An ideal device for nonvolatile memory applications
Authors:	Soon, B.W. Singh, N. Tsai, J.M. Lee, C.
Issue Date:	2013
Citation:	Soon, B.W., Singh, N., Tsai, J.M., Lee, C. (2013). A bistable silicon nanofin: An ideal device for nonvolatile memory applications. IEEE Nanotechnology Magazine 7 (2) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1109/MNANO.2013.2260461
Abstract:	We present a silicon nanofin (Si-NF) that can be actuated bidirectionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force, which holds the Si-NF to either terminal without an on-hold bias, thus exhibiting bistable hysteresis behavior. The measured pull-in voltage (VPI) and reset voltage (VRESET) are 10 and -12 V, respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, it can be an ideal device for nonvolatile memory (NVM) applications. © 2007-2011 IEEE.
Source Title:	IEEE Nanotechnology Magazine
URI:	http://scholarbank.nus.edu.sg/handle/10635/53909
ISSN:	19324510
DOI:	10.1109/MNANO.2013.2260461
Appears in Collections:	Staff Publications

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