Please use this identifier to cite or link to this item:
https://doi.org/10.1109/MNANO.2013.2260461
DC Field | Value | |
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dc.title | A bistable silicon nanofin: An ideal device for nonvolatile memory applications | |
dc.contributor.author | Soon, B.W. | |
dc.contributor.author | Singh, N. | |
dc.contributor.author | Tsai, J.M. | |
dc.contributor.author | Lee, C. | |
dc.date.accessioned | 2014-06-16T09:23:37Z | |
dc.date.available | 2014-06-16T09:23:37Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Soon, B.W., Singh, N., Tsai, J.M., Lee, C. (2013). A bistable silicon nanofin: An ideal device for nonvolatile memory applications. IEEE Nanotechnology Magazine 7 (2) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1109/MNANO.2013.2260461 | |
dc.identifier.issn | 19324510 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/53909 | |
dc.description.abstract | We present a silicon nanofin (Si-NF) that can be actuated bidirectionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force, which holds the Si-NF to either terminal without an on-hold bias, thus exhibiting bistable hysteresis behavior. The measured pull-in voltage (VPI) and reset voltage (VRESET) are 10 and -12 V, respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, it can be an ideal device for nonvolatile memory (NVM) applications. © 2007-2011 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/MNANO.2013.2260461 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/MNANO.2013.2260461 | |
dc.description.sourcetitle | IEEE Nanotechnology Magazine | |
dc.description.volume | 7 | |
dc.description.issue | 2 | |
dc.description.page | 24-28 | |
dc.identifier.isiut | 000219744200005 | |
Appears in Collections: | Staff Publications |
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