Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/34981
Title: METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
Authors: CHUA SOO JIN 
ZHOU HAILONG
LIN JIANYI 
PAN HUI 
Issue Date: 26-Jan-2012
Source: CHUA SOO JIN,ZHOU HAILONG,LIN JIANYI,PAN HUI (2012-01-26). METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE. ScholarBank@NUS Repository.
Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000.degree. C.; (2) patterning a SiO.sub.2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10.sup.4/cm.sup.-2, which will find important applications in future electronic and optoelectronic devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/34981
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