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https://scholarbank.nus.edu.sg/handle/10635/34981
DC Field | Value | |
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dc.title | METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE | |
dc.contributor | NATIONAL UNIVERSITY OF SINGAPORE | |
dc.contributor.author | CHUA SOO JIN | |
dc.contributor.author | ZHOU HAILONG | |
dc.contributor.author | LIN JIANYI | |
dc.contributor.author | PAN HUI | |
dc.date.accessioned | 2012-10-08T08:23:45Z | |
dc.date.available | 2012-10-08T08:23:45Z | |
dc.date.issued | 2012-01-26 | |
dc.identifier.citation | CHUA SOO JIN,ZHOU HAILONG,LIN JIANYI,PAN HUI (2012-01-26). METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/34981 | |
dc.description.abstract | A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000.degree. C.; (2) patterning a SiO.sub.2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10.sup.4/cm.sup.-2, which will find important applications in future electronic and optoelectronic devices. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US20120018699A1 | |
dc.source | PatSnap | |
dc.type | Patent | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.contributor.department | PHYSICS | |
dc.identifier.isiut | NOT_IN_WOS | |
dc.description.patentno | US20120018699A1 | |
dc.description.patenttype | Published Application | |
Appears in Collections: | Staff Publications |
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US20120018699A1.PDF | 363.78 kB | Adobe PDF | OPEN | Published | View/Download |
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