Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32579
Title: Passivation of copper interconnect surfaces with a passivating metal layer
Authors: CHAN, LAP
YAP, KUAN PEI
TEE, KHENG CHOK
IP, FLORA S.
LOH, WYE BOON
Issue Date: 8-Aug-2000
Source: CHAN, LAP,YAP, KUAN PEI,TEE, KHENG CHOK,IP, FLORA S.,LOH, WYE BOON (2000-08-08). Passivation of copper interconnect surfaces with a passivating metal layer. ScholarBank@NUS Repository.
Abstract: An interconnect line on an IMD layer on a semiconductor device is formed in an interconnect hole in the IMD layer. The interconnect hole has walls and a bottom in the IMD layer. A diffusion barrier is formed on the walls and the bottom of the hole. Fill the interconnect hole with a copper metal line. Perform a CMP step to planarize the device and to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole. Alternatively, a blanket deposit of a copper metal line layer covers the diffusion layer and fills the interconnect hole with a copper metal line. Perform a CMP process to planarize the device to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole in a self-aligned deposition process.
URI: http://scholarbank.nus.edu.sg/handle/10635/32579
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