Please use this identifier to cite or link to this item:
|Title:||Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals|
|Publisher:||Royal Society of Chemistry|
|Citation:||Chang Jingjing, Lin Zhenhua, Lin Ming, Zhu Chunxiang, Zhang Jie, Wu Jishan (2015). Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals. Journal of Materials Chemistry C 3 (8) : 1787-1793. ScholarBank@NUS Repository. https://doi.org/10.1039/c4tc02257b|
|Source Title:||Journal of Materials Chemistry C|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 23, 2018
WEB OF SCIENCETM
checked on May 16, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.