Please use this identifier to cite or link to this item:
https://doi.org/10.1039/c4tc02257b
DC Field | Value | |
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dc.title | Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals | |
dc.contributor.author | Chang Jingjing | |
dc.contributor.author | Lin Zhenhua | |
dc.contributor.author | Lin Ming | |
dc.contributor.author | Zhu Chunxiang | |
dc.contributor.author | Zhang Jie | |
dc.contributor.author | Wu Jishan | |
dc.date.accessioned | 2016-09-09T00:57:09Z | |
dc.date.available | 2016-09-09T00:57:09Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Chang Jingjing, Lin Zhenhua, Lin Ming, Zhu Chunxiang, Zhang Jie, Wu Jishan (2015). Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals. Journal of Materials Chemistry C 3 (8) : 1787-1793. ScholarBank@NUS Repository. https://doi.org/10.1039/c4tc02257b | |
dc.identifier.issn | 20507534 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/127498 | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c4tc02257b | |
dc.publisher | Royal Society of Chemistry | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1039/c4tc02257b | |
dc.description.sourcetitle | Journal of Materials Chemistry C | |
dc.description.volume | 3 | |
dc.description.issue | 8 | |
dc.description.page | 1787-1793 | |
dc.identifier.isiut | 000349758300022 | |
dc.published.state | published | |
dc.grant.id | 10-1P0508 | |
dc.grant.id | IMRE/13-1C0205 | |
dc.grant.id | MOE2011-T2-2-130 | |
dc.grant.fundingagency | IMRE, Institute of Materials Research and Engineering - A STAR | |
dc.grant.fundingagency | IMRE, Institute of Materials Research and Engineering - A STAR | |
dc.grant.fundingagency | MOE, Institute of Materials Research and Engineering - A STAR | |
Appears in Collections: | Staff Publications |
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