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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98970
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dc.titleDetection of oxidation stacking faults in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer
dc.contributor.authorNg, S.C.
dc.contributor.authorTaijing, L.
dc.date.accessioned2014-10-16T09:53:37Z
dc.date.available2014-10-16T09:53:37Z
dc.date.issued1993-07
dc.identifier.citationNg, S.C.,Taijing, L. (1993-07). Detection of oxidation stacking faults in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer. Journal of Crystal Growth 131 (1-2) : 265-267. ScholarBank@NUS Repository.
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98970
dc.description.abstractThe ring-bands of oxidation stacking faults (OSFs) in silicon wafers were detected nondestructively using a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer. © 1993.
dc.sourceScopus
dc.typeOthers
dc.contributor.departmentPHYSICS
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume131
dc.description.issue1-2
dc.description.page265-267
dc.description.codenJCRGA
dc.identifier.isiutNOT_IN_WOS
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