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|Title:||The interaction of C 60 with Si(111) and Co/Si(111)||Authors:||Zilani, M.A.K.
|Issue Date:||2004||Citation:||Zilani, M.A.K.,Xu, H.,Wang, X.S.,Wee, A.T.S. (2004). The interaction of C 60 with Si(111) and Co/Si(111). Materials Research Society Symposium Proceedings 815 : 149-154. ScholarBank@NUS Repository.||Abstract:||We have studied the interaction of C 60 with clean Si(111) and sub-monolayer Co covered Si(111) using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Our STM results indicate that C 60 has little mobility at room temperature (RT) on Co/Si(111). After annealing to 450°C, STM images show a regular arrangement of partially decomposed C 60-. XPS reveals a partial decomposition of C 60 on Co/Si(111) at 520°C, and total decomposition to form a SiC-3×3 phase at 720°C. These results show that Co catalyses C 60 decomposition resulting in the formation of the ordered SiC-3×3 phase ∼200°C below that on clean Si(111).||Source Title:||Materials Research Society Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/98924||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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