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|Title:||Combined optical, structural and theoretical assessment of MOCVD grown multiple GaAs quantum wells||Authors:||Feng, Z.C.
|Issue Date:||1994||Citation:||Feng, Z.C.,Cen, J.,Bajaj, K.K.,Messham, R.L.,Clemen, L.L.,Yoganathan, M.,Choyke, W.J. (1994). Combined optical, structural and theoretical assessment of MOCVD grown multiple GaAs quantum wells. Materials Research Society Symposium Proceedings 326 : 359-364. ScholarBank@NUS Repository.||Abstract:||A combined characterization of theoretical calculation and experimental, measurements, including Raman scattering, photoluminescence and cross sectional transmission electron microscopy, has been made on GaAs-AlxGa1-xAs multiple quantum wells (MQW) structures with different well widths grown by metalorganic chemical vapor epitaxy (MOCVD) with a modified reactor. Various parameters of these MQWs are obtained. The results with and without the alkyl push flow are compared. Related physical phenomena are discussed.||Source Title:||Materials Research Society Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/98654||ISBN:||1558992251||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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