Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/6/45/006
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dc.titleVacancies on the Si(001) c(4 × 2) surface
dc.contributor.authorLow, K.C.
dc.contributor.authorLim, H.S.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:48:20Z
dc.date.available2014-10-16T09:48:20Z
dc.date.issued1994-11-07
dc.identifier.citationLow, K.C., Lim, H.S., Ong, C.K. (1994-11-07). Vacancies on the Si(001) c(4 × 2) surface. Journal of Physics Condensed Matter 6 (45) : 9551-9560. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/6/45/006
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98542
dc.description.abstractWe have employed a parametrized tight-binding molecular-dynamics scheme in the study of the phenomenon of vacancies on the Si(001) c(4 × 2) surface. Simulated annealing is performed with a 'fictitious-Lagrangian' procedure to determine the optimal structures of a single and a dimer vacancy on this surface. A monovacancy is found to be less stable than a dimer vacancy, which agrees with experimental observations. We also show that there is a possible anisotropy in the surface migration of a dimer vacancy on the surface. The calculated activation energy for dimer-vacancy diffusion is 0.6 eV higher than that estimated experimentally at high temperatures.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/6/45/006
dc.description.sourcetitleJournal of Physics Condensed Matter
dc.description.volume6
dc.description.issue45
dc.description.page9551-9560
dc.description.codenJCOME
dc.identifier.isiutA1994PQ90900006
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