Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0953-8984/6/45/006
DC Field | Value | |
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dc.title | Vacancies on the Si(001) c(4 × 2) surface | |
dc.contributor.author | Low, K.C. | |
dc.contributor.author | Lim, H.S. | |
dc.contributor.author | Ong, C.K. | |
dc.date.accessioned | 2014-10-16T09:48:20Z | |
dc.date.available | 2014-10-16T09:48:20Z | |
dc.date.issued | 1994-11-07 | |
dc.identifier.citation | Low, K.C., Lim, H.S., Ong, C.K. (1994-11-07). Vacancies on the Si(001) c(4 × 2) surface. Journal of Physics Condensed Matter 6 (45) : 9551-9560. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/6/45/006 | |
dc.identifier.issn | 09538984 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98542 | |
dc.description.abstract | We have employed a parametrized tight-binding molecular-dynamics scheme in the study of the phenomenon of vacancies on the Si(001) c(4 × 2) surface. Simulated annealing is performed with a 'fictitious-Lagrangian' procedure to determine the optimal structures of a single and a dimer vacancy on this surface. A monovacancy is found to be less stable than a dimer vacancy, which agrees with experimental observations. We also show that there is a possible anisotropy in the surface migration of a dimer vacancy on the surface. The calculated activation energy for dimer-vacancy diffusion is 0.6 eV higher than that estimated experimentally at high temperatures. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1088/0953-8984/6/45/006 | |
dc.description.sourcetitle | Journal of Physics Condensed Matter | |
dc.description.volume | 6 | |
dc.description.issue | 45 | |
dc.description.page | 9551-9560 | |
dc.description.coden | JCOME | |
dc.identifier.isiut | A1994PQ90900006 | |
Appears in Collections: | Staff Publications |
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