Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3425667
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dc.titleTwo-dimensional electron or hole gas at ZnO/6H-SiC interface
dc.contributor.authorLu, Y.H.
dc.contributor.authorXu, B.
dc.contributor.authorWu, R.Q.
dc.contributor.authorFeng, Y.P.
dc.date.accessioned2014-10-16T09:47:31Z
dc.date.available2014-10-16T09:47:31Z
dc.date.issued2010
dc.identifier.citationLu, Y.H., Xu, B., Wu, R.Q., Feng, Y.P. (2010). Two-dimensional electron or hole gas at ZnO/6H-SiC interface. Applied Physics Letters 96 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3425667
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98475
dc.description.abstractElectronic structures of ZnO(0001)/6H-SiC(0001) interfaces are investigated using first-principles method. Two-dimensional charge carriers are found at the interfaces. Depending on the interface structure, the type of charge carriers can be n -type if oxygen terminated ZnO(0001) is grown on SiC and p -type when the interface is formed with Zn-terminated ZnO and C-terminated SiC. The interface formed with Zn-terminated ZnO and Si-terminated SiC is found to be half-metallic. Intrinsic charge carriers at the interface of the two wide gap semiconductors could be useful for future oxide-based electronics and spintronics. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3425667
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3425667
dc.description.sourcetitleApplied Physics Letters
dc.description.volume96
dc.description.issue19
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000277756400033
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