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Title: TOF study of pulsed-laser ablation of aluminum nitride for thin film growth
Authors: Chu, C.
Ong, P.P. 
Chen, H.F. 
Teo, H.H.
Keywords: Laser ablation
Laser ionization time-of-flight mass spectrometry (TOF-MS)
Pulsed-laser deposition (PLD)
Issue Date: 1-Jan-1999
Citation: Chu, C.,Ong, P.P.,Chen, H.F.,Teo, H.H. (1999-01-01). TOF study of pulsed-laser ablation of aluminum nitride for thin film growth. Applied Surface Science 137 (1-3) : 91-97. ScholarBank@NUS Repository.
Abstract: Laser ionization time-of-flight mass spectrometry (TOF-MS) was used to study the process of pulsed-laser deposition (PLD) of Aluminum Nitride (AlN) thin films. The components of the plume from the AlN target obviously changed under different deposition conditions. For the same impurity level, positive AlN ions were freer from impurities than negative ions. However, negative ions were more likely to form larger clusters. In particular, a novel cluster, comprising 10 AlN, was observed in negative TOF, suggesting that it is likely to yield highly oriented crystalline thin films when deposited on a substrate. © 1999 Elsevier Science B.V. All rights reserved.
Source Title: Applied Surface Science
ISSN: 01694332
Appears in Collections:Staff Publications

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