Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1719267
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dc.titleTime-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides
dc.contributor.authorChong, Y.F.
dc.contributor.authorGossmann, H.-J.L.
dc.contributor.authorThompson, M.O.
dc.contributor.authorYang, S.
dc.contributor.authorPey, K.L.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:46:48Z
dc.date.available2014-10-16T09:46:48Z
dc.date.issued2004-06-01
dc.identifier.citationChong, Y.F., Gossmann, H.-J.L., Thompson, M.O., Yang, S., Pey, K.L., Wee, A.T.S. (2004-06-01). Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides. Journal of Applied Physics 95 (11 I) : 6048-6053. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1719267
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98413
dc.description.abstractThe melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon gates on ultrathin gate oxides were investigated. To reduce the gate depletion effect in advanced semiconductor devices, LTP was used. In situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry were used to study the influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si. The results from TRR measurements show the presence of a buried melt for a-Si implanted with B +.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1719267
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1719267
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume95
dc.description.issue11 I
dc.description.page6048-6053
dc.description.codenJAPIA
dc.identifier.isiut000221657300013
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