Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/3/6/005
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dc.titleThe nature of the hydrogen-boron complex of crystalline Si
dc.contributor.authorOng, C.K.
dc.contributor.authorKhoo, G.S.
dc.date.accessioned2014-10-16T09:45:26Z
dc.date.available2014-10-16T09:45:26Z
dc.date.issued1991
dc.identifier.citationOng, C.K., Khoo, G.S. (1991). The nature of the hydrogen-boron complex of crystalline Si. Journal of Physics: Condensed Matter 3 (6) : 675-680. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/3/6/005
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98299
dc.description.abstractThe authors have used the complete neglect of differential overlap (CNDO) method to investigate the motion of the H atom within the Si lattice in the presence of a B impurity. Their results seem to indicate that the H atom moves in a low-energy channel in the vicinity of the B atom located at a substitutional site. However, the most stable configuration of this H-B system results when the H atom lodges itself near the bond-centred site of a Si-B bond (BM site). The B atom is displaced towards the plane of the other three neighbouring Si atoms and this displacement is calculated to be 0.28 AA, which agrees very well with the experimental value of 0.28+or-0.03 AA.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/3/6/005
dc.description.sourcetitleJournal of Physics: Condensed Matter
dc.description.volume3
dc.description.issue6
dc.description.page675-680
dc.identifier.isiutA1991EX87400005
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