Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98295
DC FieldValue
dc.titleThe migration of self-interstitials in germanium
dc.contributor.authorKhoo, G.S.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:45:22Z
dc.date.available2014-10-16T09:45:22Z
dc.date.issued1990
dc.identifier.citationKhoo, G.S.,Ong, C.K. (1990). The migration of self-interstitials in germanium. Journal of Physics and Chemistry of Solids 51 (10) : 1177-1179. ScholarBank@NUS Repository.
dc.identifier.issn00223697
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98295
dc.description.abstractMolecular clusters of varying sizes from 65 to 82 atoms were used in the self-consistent semi-empirical molecular orbital method to calculate the total energies for the different interstitial configurations at different charge states of Ge. Relaxations were made for each calculation so that the most stable configurations were obtained. We found that the possible diffusion path for the positively charged interstitial is THT with a barrier height of 2 eV. The preferred diffusion path for neutral and negatively charged states is XTX with barrier heights varying from 0.58 to 1.45 eV. The Bourgoin-Corbett mechanism is found to be possible for p-type Ge. © 1990.
dc.sourceScopus
dc.subjectdefects in Ge
dc.subjectDiffusion
dc.subjectsemiconductors
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleJournal of Physics and Chemistry of Solids
dc.description.volume51
dc.description.issue10
dc.description.page1177-1179
dc.description.codenJPCSA
dc.identifier.isiutNOT_IN_WOS
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