Synthesis and characterization of Y2O3:Eu3+ thin films on silicon substrate by pulsed laser ablation

Abstract

Y2O3:Eu3+ thin films were prepared by pulsed laser ablation on silicon (100) substrate. The relative photoluminescence intensity dependence on annealing time was studied. The microstructures of annealing thin films were studied by atomic force microscopy. It was observed that the photoluminescence intensity at 611 nm from thin film annealed at 1000°C for 4 h tended to saturate, the average crystal size of the thin film was estimated to be 71 nm by x-ray diffraction measurements.