Please use this identifier to cite or link to this item: https://doi.org/10.1002/sia.2541
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dc.titleSurface transient effects in ultralow-energy Cs+ sputtering of Si
dc.contributor.authorChanbasha, A.R.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:43:32Z
dc.date.available2014-10-16T09:43:32Z
dc.date.issued2007-05
dc.identifier.citationChanbasha, A.R., Wee, A.T.S. (2007-05). Surface transient effects in ultralow-energy Cs+ sputtering of Si. Surface and Interface Analysis 39 (5) : 397-404. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.2541
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98145
dc.description.abstractThis study examines the dependence of the sputter rate and the transient width (ztr) as a function of Cs+ primary ion energy (impact energy (Ep) = 320 eV, 500 eV and 1 keV) and incident angles between 0 and 70°. The instrument used was the ATOMIKA 4500 SIMS depth profiler and the sample was Si with ten delta layers of Si0.7 Ge 0.3. We observed the narrowest transient widths of between 1.4 and 2.0 nm apparent depth. This was achieved at incident angles (θ) of 30-50°. An extended transient effect was observed when profiled at θ > 50°. Below this incident angle, the transient width is less than twice the penetration depth (ztr < 2Rnorm). At minimum z tr, ztr ≈ Rnorm. The detection sensitivity is best achieved at θ ≈ 30° for all energies investigated. The sputter rate is lowest at normal incidence, rising gradually to a maximum at θ ≈ 50-60°. This is similar to that observed with ultralow-energy O2 + primary ion beams.1 At ultralow energies, reducing Ep does not have a significant effect in reducing z tr. We conclude that for Ep < 1 keV, the optimum condition to achieve minimum ztr while maintaining good sensitivity and high sputter rate is at θ ≈ 30°. Copyright © 2007 John Wiley & Sons, Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/sia.2541
dc.sourceScopus
dc.subjectSecondary ion mass spectroscopy
dc.subjectSputter rate
dc.subjectSurface transient
dc.subjectUltralow energy
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/sia.2541
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume39
dc.description.issue5
dc.description.page397-404
dc.description.codenSIAND
dc.identifier.isiut000245705200005
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