Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/1/25/005
DC FieldValue
dc.titleSurface reconstruction on Si(100) studied by the CNDO method
dc.contributor.authorOng, C.K.
dc.contributor.authorChan, B.C.
dc.date.accessioned2014-10-16T09:43:30Z
dc.date.available2014-10-16T09:43:30Z
dc.date.issued1989
dc.identifier.citationOng, C.K., Chan, B.C. (1989). Surface reconstruction on Si(100) studied by the CNDO method. Journal of Physics: Condensed Matter 1 (25) : 3931-3938. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/1/25/005
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98141
dc.description.abstractThe authors have examined seven reasonable asymmetrical dimer configurations for a Si(100) surface using the CNDO method. In this work, all structures resulting from higher-order dimer reconstruction are named according to Pauling and Herman's terminology. Reconstructed 4*1 and 4*2 surfaces are found to be energetically more favourable, followed by 2*2A and 2*1. The total energies per dimer of these four structures are reasonably close to each other and a disordered mixture of them might appear at the Si(100) surface. The results agree well with previous theoretical work as well as with experimental results. However, the 4*1 configuration cannot be confirmed as it has not been observed experimentally. The results on the amount of charge transfer to the dimer atoms and the dimer lengths for each configurations are also presented.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/1/25/005
dc.description.sourcetitleJournal of Physics: Condensed Matter
dc.description.volume1
dc.description.issue25
dc.description.page3931-3938
dc.identifier.isiutA1989AC56500005
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