Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1381050
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dc.titleSurface modification of CdS nanocrystallites doped in SiO2 matrix
dc.contributor.authorWang, H.
dc.contributor.authorZhu, Y.
dc.contributor.authorOng, P.P.
dc.date.accessioned2014-10-16T09:43:25Z
dc.date.available2014-10-16T09:43:25Z
dc.date.issued2001-07-05
dc.identifier.citationWang, H., Zhu, Y., Ong, P.P. (2001-07-05). Surface modification of CdS nanocrystallites doped in SiO2 matrix. Journal of Applied Physics 90 (2) : 964-968. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1381050
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98134
dc.description.abstractNanometer-sized CdS semiconductor particles were prepared by pulsed laser deposition (PLD) and dispersed in SiO2 matrix. Surface modification of the CdS nanocrystallites deposited with the SiO2 material on a substrate caused the generation of CdO composite, which formed an encapsulating shell layer surrounding the inner CdS crystallite. Raman and photoluminescence (PL) analyses clearly identified and characterized this component. Annealing of the film caused growth in size of the CdO shell as established from the redshift of its PL band gap emission. This growth was found to keep in unison with the corresponding inner CdS crystalline growth, and a possible mechanism is suggested. Finally, through proper selection of the substrate temperature during PLD to remove crystalline stress, it was possible to obtain a complete optimum CdS profile without the accompanying CdO formation or characteristics. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1381050
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1381050
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume90
dc.description.issue2
dc.description.page964-968
dc.description.codenJAPIA
dc.identifier.isiut000169660000063
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