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https://doi.org/10.1149/1.2428413
DC Field | Value | |
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dc.title | Structural properties of ZnO grown on GaNSapphire templates | |
dc.contributor.author | Zhou, H.L. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Pan, H. | |
dc.contributor.author | Lin, J.Y. | |
dc.contributor.author | Feng, Y.P. | |
dc.contributor.author | Wang, L.S. | |
dc.contributor.author | Liu, W. | |
dc.contributor.author | Zang, K.Y. | |
dc.contributor.author | Tripathy, S. | |
dc.date.accessioned | 2014-10-16T09:42:32Z | |
dc.date.available | 2014-10-16T09:42:32Z | |
dc.date.issued | 2007 | |
dc.identifier.citation | Zhou, H.L., Chua, S.J., Pan, H., Lin, J.Y., Feng, Y.P., Wang, L.S., Liu, W., Zang, K.Y., Tripathy, S. (2007). Structural properties of ZnO grown on GaNSapphire templates. Electrochemical and Solid-State Letters 10 (3) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2428413 | |
dc.identifier.issn | 10990062 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98062 | |
dc.description.abstract | ZnO nanorods were synthesized on GaN /sapphire substrates using a modified thermal-evaporation process. The as-synthesized ZnO nanorods and thin films were characterized using scanning electron microscopy, micro-Raman, and X-ray diffraction techniques. The morphology of the ZnO changes from nanorods to continuous thin films when the growth temperature increases to 800°C. Further increase in the growth temperature leads to a lower growth rate of ZnO along the (0001) direction. Micro-photoluminescence measurements show ultraviolet band-edge emission peaks around 378 nm from both nanorods and thin films. Realization of such ZnO structures may be useful for the fabrication of hybrid ZnOGaN optoelectronic devices. © 2007 The Electrochemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2428413 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1149/1.2428413 | |
dc.description.sourcetitle | Electrochemical and Solid-State Letters | |
dc.description.volume | 10 | |
dc.description.issue | 3 | |
dc.description.page | H98-H100 | |
dc.description.coden | ESLEF | |
dc.identifier.isiut | 000243583700032 | |
Appears in Collections: | Staff Publications |
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