Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2428413
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dc.titleStructural properties of ZnO grown on GaNSapphire templates
dc.contributor.authorZhou, H.L.
dc.contributor.authorChua, S.J.
dc.contributor.authorPan, H.
dc.contributor.authorLin, J.Y.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorWang, L.S.
dc.contributor.authorLiu, W.
dc.contributor.authorZang, K.Y.
dc.contributor.authorTripathy, S.
dc.date.accessioned2014-10-16T09:42:32Z
dc.date.available2014-10-16T09:42:32Z
dc.date.issued2007
dc.identifier.citationZhou, H.L., Chua, S.J., Pan, H., Lin, J.Y., Feng, Y.P., Wang, L.S., Liu, W., Zang, K.Y., Tripathy, S. (2007). Structural properties of ZnO grown on GaNSapphire templates. Electrochemical and Solid-State Letters 10 (3) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2428413
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98062
dc.description.abstractZnO nanorods were synthesized on GaN /sapphire substrates using a modified thermal-evaporation process. The as-synthesized ZnO nanorods and thin films were characterized using scanning electron microscopy, micro-Raman, and X-ray diffraction techniques. The morphology of the ZnO changes from nanorods to continuous thin films when the growth temperature increases to 800°C. Further increase in the growth temperature leads to a lower growth rate of ZnO along the (0001) direction. Micro-photoluminescence measurements show ultraviolet band-edge emission peaks around 378 nm from both nanorods and thin films. Realization of such ZnO structures may be useful for the fabrication of hybrid ZnOGaN optoelectronic devices. © 2007 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2428413
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1149/1.2428413
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume10
dc.description.issue3
dc.description.pageH98-H100
dc.description.codenESLEF
dc.identifier.isiut000243583700032
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