Scattering of excitons by free carriers in semiconducting quantum well structures: Finite potential well model

Abstract

We present a theoretical calculation of the elastic and ionization scattering cross sections of excitons due to their scattering by free carriers, in semiconducting quantum well structures of finite width, using the finite confining potential well model. Our results reveal interesting features that differ significantly from the predictions of the infinite confining potential well model. We find that both the elastic and ionization cross sections initially decrease with decreasing well width, but then increase below a critical well width where the exciton begins to revert to a quasi-3D behavior. We compare the present results with those obtained using previous models to account for these new effects.