Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2892685
Title: Polyfluorene-based light-emitting diodes with an azide photocross-linked poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) hole-injecting layer
Authors: Winroth, G.
Latini, G.
Credgington, D.
Wong, L.-Y. 
Chua, L.-L. 
Ho, P.K.-H. 
Cacialli, F.
Issue Date: 2008
Citation: Winroth, G., Latini, G., Credgington, D., Wong, L.-Y., Chua, L.-L., Ho, P.K.-H., Cacialli, F. (2008). Polyfluorene-based light-emitting diodes with an azide photocross-linked poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) hole-injecting layer. Applied Physics Letters 92 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2892685
Abstract: We used a water-soluble bis(fluorinated phenyl azide) to cross-link a poly(ethylene dioxythiophene):poly(styrene sulphonic acid) (PEDOT:PSS), hole-injection layer, with a view to its future use with water-soluble emitters. To enable direct comparison with conventional PEDOT:PSS, we studied the cross-linked films in diodes incorporating the organic-solvent soluble polymer poly(9, 9′ -dioctylfluorene-alt-benzothiadiazole). Kelvin probe characterization of the PEDOT:PSS and electroabsorption measurements of the devices consistently show a 0.2 eV increase of the PEDOT:PSS work function upon cross-linking. We also observe a 70-fold reduction in resistivity, an increase of the current above threshold and a decrease of the "leakage" current below threshold. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97565
ISSN: 00036951
DOI: 10.1063/1.2892685
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