Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1839287
DC Field | Value | |
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dc.title | Photoemission study of energy-band alignment for RuOx/HfO 2/Si system | |
dc.contributor.author | Li, Q. | |
dc.contributor.author | Wang, S.J. | |
dc.contributor.author | Li, K.B. | |
dc.contributor.author | Huan, A.C.H. | |
dc.contributor.author | Chai, J.W. | |
dc.contributor.author | Pan, J.S. | |
dc.contributor.author | Ong, C.K. | |
dc.date.accessioned | 2014-10-16T09:36:24Z | |
dc.date.available | 2014-10-16T09:36:24Z | |
dc.date.issued | 2004-12-20 | |
dc.identifier.citation | Li, Q., Wang, S.J., Li, K.B., Huan, A.C.H., Chai, J.W., Pan, J.S., Ong, C.K. (2004-12-20). Photoemission study of energy-band alignment for RuOx/HfO 2/Si system. Applied Physics Letters 85 (25) : 6155-6157. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1839287 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/97535 | |
dc.description.abstract | Conductive oxides RuOx as alternative electrode on high- κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx HfO2 Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2 Si are determined to be 3.05±0.1 and 1.48±0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95-2.73 eV. © 2004 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1839287 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.1839287 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 85 | |
dc.description.issue | 25 | |
dc.description.page | 6155-6157 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000225769000025 | |
Appears in Collections: | Staff Publications |
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