Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1839287
DC FieldValue
dc.titlePhotoemission study of energy-band alignment for RuOx/HfO 2/Si system
dc.contributor.authorLi, Q.
dc.contributor.authorWang, S.J.
dc.contributor.authorLi, K.B.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorChai, J.W.
dc.contributor.authorPan, J.S.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:36:24Z
dc.date.available2014-10-16T09:36:24Z
dc.date.issued2004-12-20
dc.identifier.citationLi, Q., Wang, S.J., Li, K.B., Huan, A.C.H., Chai, J.W., Pan, J.S., Ong, C.K. (2004-12-20). Photoemission study of energy-band alignment for RuOx/HfO 2/Si system. Applied Physics Letters 85 (25) : 6155-6157. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1839287
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97535
dc.description.abstractConductive oxides RuOx as alternative electrode on high- κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx HfO2 Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2 Si are determined to be 3.05±0.1 and 1.48±0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95-2.73 eV. © 2004 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1839287
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1839287
dc.description.sourcetitleApplied Physics Letters
dc.description.volume85
dc.description.issue25
dc.description.page6155-6157
dc.description.codenAPPLA
dc.identifier.isiut000225769000025
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