Please use this identifier to cite or link to this item: https://doi.org/10.1088/1367-2630/11/11/113038
DC FieldValue
dc.titlePhonon Hall effect in four-terminal nano-junctions
dc.contributor.authorZhang, L.
dc.contributor.authorWang, J.-S.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:36:16Z
dc.date.available2014-10-16T09:36:16Z
dc.date.issued2009-11-20
dc.identifier.citationZhang, L., Wang, J.-S., Li, B. (2009-11-20). Phonon Hall effect in four-terminal nano-junctions. New Journal of Physics 11 : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/11/11/113038
dc.identifier.issn13672630
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97525
dc.description.abstractUsing an exact nonequilibrium Green's function formulation, the phonon Hall effect (PHE) for paramagnetic dielectrics is studied in a nanoscale four-terminal device setting. The temperature difference in the transverse direction of the heat current is calculated for two-dimensional models with the magnetic field perpendicular to the plane. We find that there is a PHE in nanoscale paramagnetic dielectrics, the magnitude of which is comparable to millimeter scale experiments. If the dynamic matrix of the system satisfies mirror reflection symmetry, the PHE disappears. The Hall temperature difference changes sign if the magnetic field is sufficiently large or if the size increases. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/1367-2630/11/11/113038
dc.description.sourcetitleNew Journal of Physics
dc.description.volume11
dc.description.page-
dc.identifier.isiut000272152900005
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