Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2nr11459c
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dc.titleOptical and electrical applications of ZnS xSe 1-x nanowires-network with uniform and controllable stoichiometry
dc.contributor.authorLu, J.
dc.contributor.authorLiu, H.
dc.contributor.authorSun, C.
dc.contributor.authorZheng, M.
dc.contributor.authorNripan, M.
dc.contributor.authorChen, G.S.
dc.contributor.authorSubodh, G.M.
dc.contributor.authorZhang, X.
dc.contributor.authorSow, C.H.
dc.date.accessioned2014-10-16T09:35:16Z
dc.date.available2014-10-16T09:35:16Z
dc.date.issued2012-02-07
dc.identifier.citationLu, J., Liu, H., Sun, C., Zheng, M., Nripan, M., Chen, G.S., Subodh, G.M., Zhang, X., Sow, C.H. (2012-02-07). Optical and electrical applications of ZnS xSe 1-x nanowires-network with uniform and controllable stoichiometry. Nanoscale 4 (3) : 976-981. ScholarBank@NUS Repository. https://doi.org/10.1039/c2nr11459c
dc.identifier.issn20403364
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97437
dc.description.abstractSingle crystalline ternary ZnS xSe 1-x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications. © 2012 The Royal Society of Chemistry.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c2nr11459c
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1039/c2nr11459c
dc.description.sourcetitleNanoscale
dc.description.volume4
dc.description.issue3
dc.description.page976-981
dc.identifier.isiut000299292600042
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