Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00542-001-0139-5
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dc.titleNickel and copper electroplating of proton beam micromachined SU-8 resist
dc.contributor.authorVan Kan, J.A.
dc.contributor.authorRajta, I.
dc.contributor.authorAnsari, K.
dc.contributor.authorBettiol, A.A.
dc.contributor.authorWatt, F.
dc.date.accessioned2014-10-16T09:33:54Z
dc.date.available2014-10-16T09:33:54Z
dc.date.issued2002-09
dc.identifier.citationVan Kan, J.A., Rajta, I., Ansari, K., Bettiol, A.A., Watt, F. (2002-09). Nickel and copper electroplating of proton beam micromachined SU-8 resist. Microsystem Technologies 8 (6) : 383-386. ScholarBank@NUS Repository. https://doi.org/10.1007/s00542-001-0139-5
dc.identifier.issn09467076
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97323
dc.description.abstractProton beam micromachining (PBM) has been shown to be a powerful technique to produce three-dimensional (3D) high-aspect-ratio microstructures (Watt et al., 2000). Potential commercial applications of PBM, which is a fast direct write technique, will become feasible if the fabrication of metallic molds or stamps is realised. Metallic components can be produced by electroplating a master from a microstructure produced in resist. The production of high-aspect-ratio metallic stamps and molds requires a lithographic technique capable of producing smooth and near 90° sidewalls and a one to one conversion of a resist structure to a metallic microstructure. PBM is the only technique capable of producing high-aspect-ratio microstructures with sub-micron details via a direct write process. In PBM, SU-8 (Lorenz et al., 1997) resist structures are produced by exposing the SU-8 resist with a focused MeV proton beam followed by chemical development and a subsequent electroplating step using Ni or Cu. The data presented shows that PBM can successfully produce high-aspect-ratio, sub-micron sized smooth metallic structures with near 90° sidewall profiles.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00542-001-0139-5
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1007/s00542-001-0139-5
dc.description.sourcetitleMicrosystem Technologies
dc.description.volume8
dc.description.issue6
dc.description.page383-386
dc.identifier.isiut000178720100004
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