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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2051792
DC FieldValue
dc.titleMechanism of tantalum adhesion on SiLK™
dc.contributor.authorHu, Y.
dc.contributor.authorYang, S.-W.
dc.contributor.authorChen, X.T.
dc.contributor.authorLu, D.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorWu, P.
dc.date.accessioned2014-10-16T09:32:06Z
dc.date.available2014-10-16T09:32:06Z
dc.date.issued2005-09-19
dc.identifier.citationHu, Y., Yang, S.-W., Chen, X.T., Lu, D., Feng, Y.P., Wu, P. (2005-09-19). Mechanism of tantalum adhesion on SiLK™. Applied Physics Letters 87 (12) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2051792
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97170
dc.description.abstractTantalum adhesion on SiLK™ was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK™. In addition, the degradation effects of H2 He reactive plasma clean on Ta adhesion on SiLK™ was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK™ with Cu up to seven metal layers. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2051792
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2051792
dc.description.sourcetitleApplied Physics Letters
dc.description.volume87
dc.description.issue12
dc.description.page1-3
dc.description.codenAPPLA
dc.identifier.isiut000231907200060
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