Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/97159
DC FieldValue
dc.titleMeasurement of phosphorus content in silica layers
dc.contributor.authorLoh, K.K.
dc.contributor.authorSow, C.H.
dc.contributor.authorTan, K.H.
dc.contributor.authorTan, H.S.
dc.contributor.authorTang, S.M.
dc.contributor.authorOrlic, I.
dc.contributor.authorOsipowicz, T.
dc.date.accessioned2014-10-16T09:31:59Z
dc.date.available2014-10-16T09:31:59Z
dc.date.issued1993-04-03
dc.identifier.citationLoh, K.K.,Sow, C.H.,Tan, K.H.,Tan, H.S.,Tang, S.M.,Orlic, I.,Osipowicz, T. (1993-04-03). Measurement of phosphorus content in silica layers. Nuclear Inst. and Methods in Physics Research, B 75 (1-4) : 364-366. ScholarBank@NUS Repository.
dc.identifier.issn0168583X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97159
dc.description.abstractThe phosphorus contents in the thin protective layers of P2O5 +SiO2 on a number of silicon wafers were measured by using both PIXE and RBS techniques. Analyzing the two sets of data with the assumption of a uniform distribution of phosphorus in the oxide layer yielded an apparent discrepancy. It was found by computer simulation that the discrepancy could be removed by introducing nonconstant depth profiles of phosphorus in the analysis of the RBS data. A similar investigation also revealed that PIXE analysis was not sensitive to the phosphorus depth profile. © 1993.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleNuclear Inst. and Methods in Physics Research, B
dc.description.volume75
dc.description.issue1-4
dc.description.page364-366
dc.description.codenNIMBE
dc.identifier.isiutNOT_IN_WOS
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