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Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2
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dc.titleLaser-induced formation of titanium silicides
dc.contributor.authorChen, S.Y.
dc.contributor.authorShen, Z.X.
dc.contributor.authorChen, Z.D.
dc.contributor.authorSee, A.K.
dc.contributor.authorChan, L.H.
dc.contributor.authorZhang, T.J.
dc.contributor.authorTee, K.C.
dc.date.accessioned2014-10-16T09:30:40Z
dc.date.available2014-10-16T09:30:40Z
dc.date.issued1999
dc.identifier.citationChen, S.Y.,Shen, Z.X.,Chen, Z.D.,See, A.K.,Chan, L.H.,Zhang, T.J.,Tee, K.C. (1999). Laser-induced formation of titanium silicides. Surface and Interface Analysis 28 (1) : 200-203. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2</a>
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97048
dc.description.abstractIn this article, we report on the laser-induced formation of both C49 and C54 TiSi2 films with fine grains using Q-switched Nd:YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro-Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single-phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid-state reaction rather than liquid-phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume28
dc.description.issue1
dc.description.page200-203
dc.description.codenSIAND
dc.identifier.isiutNOT_IN_WOS
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