Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3000441
DC FieldValue
dc.titleInterfacial thermal conductance between silicon and a vertical carbon nanotube
dc.contributor.authorHu, M.
dc.contributor.authorKeblinski, P.
dc.contributor.authorWang, J.-S.
dc.contributor.authorRaravikar, N.
dc.date.accessioned2014-10-16T09:29:43Z
dc.date.available2014-10-16T09:29:43Z
dc.date.issued2008
dc.identifier.citationHu, M., Keblinski, P., Wang, J.-S., Raravikar, N. (2008). Interfacial thermal conductance between silicon and a vertical carbon nanotube. Journal of Applied Physics 104 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3000441
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96966
dc.description.abstractMolecular simulations are used to evaluate thermal resistance between crystalline silicon and a vertically oriented carbon nanotube (CNT). Without chemical bonds between CNT and Si the thermal resistance is high and its values are consistent with that measured in experiment on vertical CNT arrays. With chemical bonds the thermal resistance is reduced by two orders of magnitude demonstrating significant potential of CNT arrays for thermal management applications. The underlying mechanism for the very large effect of chemical bonding is revealed by simulations of individual phonon scattering across the interface and understood within an analytical solution of a simple spring-mass chain model. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3000441
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3000441
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume104
dc.description.issue8
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000260572100020
Appears in Collections:Staff Publications

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