Please use this identifier to cite or link to this item:
https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X
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dc.title | Inter-diffusion studies of SrBi2Ta2O9 film prepared on platinized wafer by pulsed laser ablation | |
dc.contributor.author | Jiang, X.H. | |
dc.contributor.author | Tay, S.T. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Huan, C.H.A. | |
dc.contributor.author | Liu, J.M. | |
dc.date.accessioned | 2014-10-16T09:29:35Z | |
dc.date.available | 2014-10-16T09:29:35Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | Jiang, X.H.,Tay, S.T.,Wee, A.T.S.,Huan, C.H.A.,Liu, J.M. (1999). Inter-diffusion studies of SrBi2Ta2O9 film prepared on platinized wafer by pulsed laser ablation. Surface and Interface Analysis 28 (1) : 217-220. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X</a> | |
dc.identifier.issn | 01422421 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96955 | |
dc.description.abstract | Ferroelectric SrBi2Ta2O9 (SBT) thin films were prepared on platinized wafer - Pt/TiOx/SiO2/Si - by pulsed laser ablation deposition. Phase formation of SBT film was achieved during the deposition process itself, so the post-annealing that is often used by other groups is not necessary. The SBT film was well-crystallized, showing a dominant (115) peak at a deposition temperature as low as 580 °C, and exhibited good ferroelectric properties - the remanent polarization and coercive electrical field are 7.1 μC cm-2 (2Pr) and 30 kV cm-1, respectively, at an applied electrical field of 80 kV cm-1. Secondary ion mass spectrometry depth profiling and cross-sectional transmission electron microscopy were performed to study the inter-diffusion at the SBT/Pt bottom electrode interface. A sharp SBT/Pt interface was observed at a deposition temperature of 580 °C, but a higher deposition temperature (680 °C) resulted in significant inter-diffusion at the SBT/Pt interface. The formation of a secondary pyrochlore phase was observed due to Ti diffusion into SBT film at a high deposition temperature of 680 °C. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X | |
dc.description.sourcetitle | Surface and Interface Analysis | |
dc.description.volume | 28 | |
dc.description.issue | 1 | |
dc.description.page | 217-220 | |
dc.description.coden | SIAND | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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