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https://doi.org/10.1103/PhysRevB.47.16369
DC Field | Value | |
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dc.title | H-induced passivation of GaAs(110)-Be surface-acceptor systems | |
dc.contributor.author | Khoo, G.S. | |
dc.contributor.author | Ong, C.K. | |
dc.date.accessioned | 2014-10-16T09:28:00Z | |
dc.date.available | 2014-10-16T09:28:00Z | |
dc.date.issued | 1993 | |
dc.identifier.citation | Khoo, G.S., Ong, C.K. (1993). H-induced passivation of GaAs(110)-Be surface-acceptor systems. Physical Review B 47 (24) : 16369-16372. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.47.16369 | |
dc.identifier.issn | 01631829 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96826 | |
dc.description.abstract | Complete neglect of differential overlap cluster calculations have been performed for H+ on a clean GaAs(110) surface. The results demonstrate that H+ prefers to bond with the surface As atom rather than the surface Ga atom. Investigation of a microscopic model for hydrogen (H) -induced passivation on p-type GaAs(110) surfaces, where a surface Ga atom is replaced by a Be acceptor atom, also shows that, in equilibrium, the H atom attaches itself to the dangling bond of the As atom next to the Be atom. Passivation occurs due to compensation when the H atom captures a free hole to form H+ which then subsequently finds the As atom next to the acceptor. This microscopic model may account for the As-H stretching lines observed in infrared experiments as well as for the absence of Ga-H lines. © 1993 The American Physical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.47.16369 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1103/PhysRevB.47.16369 | |
dc.description.sourcetitle | Physical Review B | |
dc.description.volume | 47 | |
dc.description.issue | 24 | |
dc.description.page | 16369-16372 | |
dc.identifier.isiut | A1993LJ15600037 | |
Appears in Collections: | Staff Publications |
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