Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3567768
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dc.titleFirst principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects
dc.contributor.authorJiang, J.-W.
dc.contributor.authorWang, B.-S.
dc.contributor.authorWang, J.-S.
dc.date.accessioned2014-10-16T09:25:48Z
dc.date.available2014-10-16T09:25:48Z
dc.date.issued2011-03-14
dc.identifier.citationJiang, J.-W., Wang, B.-S., Wang, J.-S. (2011-03-14). First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects. Applied Physics Letters 98 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3567768
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96641
dc.description.abstractThe thermal conductance in graphene nanoribbon with a vacancy or silicon point defect is investigated by nonequilibrium Green's function (NEGF) formalism combined with first-principles calculations of density-functional theory with local density approximation. The thermal conductance is very sensitive to the position of the vacancy defect, while insensitive to the position of silicon defect. A vacancy defect situated at the center of the nanoribbon generates a saddlelike surface, which greatly reduces the thermal conductance by strong scattering to all phonon modes; while an edge vacancy defect only results in a further reconstruction of the edge and slightly reduces the thermal conductance. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3567768
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3567768
dc.description.sourcetitleApplied Physics Letters
dc.description.volume98
dc.description.issue11
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000288569300059
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