Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/9/37/015
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dc.titleExciton-exciton scattering in semiconducting quantum well structures in the presence of a transverse electric field
dc.contributor.authorKoh, T.S.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorSpector, H.N.
dc.date.accessioned2014-10-16T09:24:44Z
dc.date.available2014-10-16T09:24:44Z
dc.date.issued1997-09-15
dc.identifier.citationKoh, T.S., Feng, Y.P., Spector, H.N. (1997-09-15). Exciton-exciton scattering in semiconducting quantum well structures in the presence of a transverse electric field. Journal of Physics Condensed Matter 9 (37) : 7845-7853. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/9/37/015
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96548
dc.description.abstractExciton-exciton elastic scattering in semiconducting quantum well structures in the presence of a transverse electric field is theoretically investigated. The scattering cross section is calculated for various electric field strengths and well widths. It is found that the electric field has little effect on the exciton-exciton scattering cross section in narrow quantum wells. On the other hand, in wide quantum wells the electric field significantly polarizes the excitons and enhances the total cross sections, which can exhibit a behavior similar to that typical of free-carrier-free-carrier scattering in the qrantum well. The effect of the electric field on the exciton-exciton scattering is found to be stronger than that on free-carrier-exciton scattering.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/9/37/015
dc.description.sourcetitleJournal of Physics Condensed Matter
dc.description.volume9
dc.description.issue37
dc.description.page7845-7853
dc.description.codenJCOME
dc.identifier.isiutA1997XW78900015
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