Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2747214
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dc.titleElectronic structure of germanium nitride considered for gate dielectrics
dc.contributor.authorYang, M.
dc.contributor.authorWang, S.J.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorPeng, G.W.
dc.contributor.authorSun, Y.Y.
dc.date.accessioned2014-10-16T09:23:22Z
dc.date.available2014-10-16T09:23:22Z
dc.date.issued2007
dc.identifier.citationYang, M., Wang, S.J., Feng, Y.P., Peng, G.W., Sun, Y.Y. (2007). Electronic structure of germanium nitride considered for gate dielectrics. Journal of Applied Physics 102 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2747214
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96432
dc.description.abstractFirst-principles calculations based on density-functional theory and the local-density approximation have been used to investigate structural, electronic, and optical properties of α, Β, and γ phases of germanium nitride (Ge3 N4). Β- Ge3 N4 was found to be the most stable among the three structures, and it has a very small lattice mismatch with Ge, which indicates that it could be grown epitaxially on Ge. The calculated band gaps of α -, Β -, and γ- Ge3 N4 are about 3.15, 3.07, and 2.33 eV, and the corresponding static dielectric constants are 4.70, 4.74, and 6.27, respectively, within local-density approximation. Results of our calculations indicate that the band gap and static dielectric constants of Ge3 N4, as well as Si3 N4, could satisfy the requirements of gate dielectrics for Ge-based field effect transistors. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2747214
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2747214
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume102
dc.description.issue1
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000248018300023
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