Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1573739
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dc.titleElectronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN
dc.contributor.authorAl-Douri, Y.
dc.date.accessioned2014-10-16T09:23:13Z
dc.date.available2014-10-16T09:23:13Z
dc.date.issued2003-06-15
dc.identifier.citationAl-Douri, Y. (2003-06-15). Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN. Journal of Applied Physics 93 (12) : 9730-9736. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1573739
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96419
dc.description.abstractThe empirical pseudopotential method was used to investigate the electronic and positron band structures and charge densities of GaN, AlN and their alloy in the zinc-blende structure. For the ternary alloy Ga1-xAlxN, the virtual crystal approximation was coupled with the pseudopotential method. The angular correlation of the positron annihilation radiation along with the different crystallographic directions in the crystals were also calculated.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1573739
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1573739
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue12
dc.description.page9730-9736
dc.description.codenJAPIA
dc.identifier.isiut000183288900049
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