Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1573739
DC Field | Value | |
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dc.title | Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN | |
dc.contributor.author | Al-Douri, Y. | |
dc.date.accessioned | 2014-10-16T09:23:13Z | |
dc.date.available | 2014-10-16T09:23:13Z | |
dc.date.issued | 2003-06-15 | |
dc.identifier.citation | Al-Douri, Y. (2003-06-15). Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN. Journal of Applied Physics 93 (12) : 9730-9736. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1573739 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96419 | |
dc.description.abstract | The empirical pseudopotential method was used to investigate the electronic and positron band structures and charge densities of GaN, AlN and their alloy in the zinc-blende structure. For the ternary alloy Ga1-xAlxN, the virtual crystal approximation was coupled with the pseudopotential method. The angular correlation of the positron annihilation radiation along with the different crystallographic directions in the crystals were also calculated. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1573739 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.1573739 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 93 | |
dc.description.issue | 12 | |
dc.description.page | 9730-9736 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000183288900049 | |
Appears in Collections: | Staff Publications |
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