Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96363
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dc.titleEffects of impurities on dielectric properties of fluorozirconate glasses at microwave frequencies
dc.contributor.authorDing, X.Z.
dc.contributor.authorTaijing, L.
dc.contributor.authorOng, C.K.
dc.contributor.authorTan, B.T.G.
dc.contributor.authorDai, Y.
dc.date.accessioned2014-10-16T09:22:34Z
dc.date.available2014-10-16T09:22:34Z
dc.date.issued1998-02-01
dc.identifier.citationDing, X.Z.,Taijing, L.,Ong, C.K.,Tan, B.T.G.,Dai, Y. (1998-02-01). Effects of impurities on dielectric properties of fluorozirconate glasses at microwave frequencies. Journal of Applied Physics 83 (3) : 1177-1182. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96363
dc.description.abstractThe dielectric properties of fluorozirconate glasses doped with different impurities have been investigated in the frequency region of 3.0-12.5 GHz using a microwave network analyzer. For glasses containing oxide impurities such as PbO, SiO2, and TiO2, the position of the dielectric resonance, which is observed in the pure fluoride glass, shifts to higher frequencies. Amplitudes of the resonance peaks also become much smaller. The oxide impurities are observed to exist as large numbers of tiny precipitates in the glasses. When the glasses are doped with InF3, the position of the resonance peak shifts to a higher frequency but the amplitude of the peak remains unchanged. The InF3 may be substituted for AlF3 in the glasses. A higher half-resonance width is observed in the doped fluorozirconate glasses. The changes in the dielectric properties are attributed to the different behaviors of the impurities, which affect the structural interunit vibration in the fluoride glasses. © 1998 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentPHYSICS
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume83
dc.description.issue3
dc.description.page1177-1182
dc.description.codenJAPIA
dc.identifier.isiutNOT_IN_WOS
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