Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1454207
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dc.titleEffect of Cu doping on the magnetoresistive behavior of double perovskite Sr 2FeMoO 6 polycrystals
dc.contributor.authorYuan, C.L.
dc.contributor.authorZhu, Y.
dc.contributor.authorOng, P.P.
dc.date.accessioned2014-10-16T09:21:50Z
dc.date.available2014-10-16T09:21:50Z
dc.date.issued2002-04-01
dc.identifier.citationYuan, C.L., Zhu, Y., Ong, P.P. (2002-04-01). Effect of Cu doping on the magnetoresistive behavior of double perovskite Sr 2FeMoO 6 polycrystals. Journal of Applied Physics 91 (7) : 4421-4425. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1454207
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96301
dc.description.abstractThe electrical, magnetic, and transport properties of Cu-doped polycrystalline samples Sr 2Fe 1-xCu xMoO 6 with ordered double perovskite structure have been investigated systematically. Analysis of the x-ray powder diffraction pattern based on the Rietveld analysis indicates that the substitution of Fe 3+ ions by Cu 2+ ions enhances the site location order of Fe, Cu, and Mo on the B site for the high-doping-level samples (x=0.20,0.25,0.30). With increasing doping level, a transition from semiconductor to metal behavior was also found to occur. Furthermore, the transition temperature was found to decrease either by the application of a magnetic field or by increasing the doping level. It can be concluded that the existence of Cu 2+ ions induces the occurrence of Fe 3+δ ions and the double exchange interaction in Fe 3+-O-Mo-O-Fe 3+δ. The transport mechanism in these samples can be attributed to the competition between the metal phase and the semiconductor phase arising from the doping of Cu 2+ ions. Both the semiconductor-to-metal transition and the magnetoresistive behavior can be explained by the percolation threshold model. © 2002 American Institute of Physics. © 2002 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1454207
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1454207
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume91
dc.description.issue7
dc.description.page4421-4425
dc.description.codenJAPIA
dc.identifier.isiut000174663900071
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