Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4789849
DC FieldValue
dc.titleDefect enhanced funneling of diffusion current in silicon
dc.contributor.authorAzimi, S.
dc.contributor.authorDang, Z.Y.
dc.contributor.authorSong, J.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorVittone, E.
dc.contributor.authorForneris, J.
dc.date.accessioned2014-10-16T09:20:06Z
dc.date.available2014-10-16T09:20:06Z
dc.date.issued2013-01-28
dc.identifier.citationAzimi, S., Dang, Z.Y., Song, J., Breese, M.B.H., Vittone, E., Forneris, J. (2013-01-28). Defect enhanced funneling of diffusion current in silicon. Applied Physics Letters 102 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4789849
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96155
dc.description.abstractWe report a current transport mechanism observed during electrochemical anodization of ion irradiated p-type silicon, in which a hole diffusion current is highly funneled along the gradient of modified doping profile towards the maximum ion induced defect density, dominating the total current flowing and hence the anodization behaviour. This study is characterized within the context of electrochemical anodization but relevant to other fields where any residual defect density may result in similar effects, which may adversely affect performance, such as in wafer gettering or satellite-based microelectronics. Increased photoluminescence intensity from localized buried regions of porous silicon is also shown. © 2013 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4789849
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4789849
dc.description.sourcetitleApplied Physics Letters
dc.description.volume102
dc.description.issue4
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000314723600039
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