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Please use this identifier to cite or link to this item: https://doi.org/10.1002/sia.1909
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dc.titleCritical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: Results of a CCQM pilot study
dc.contributor.authorSeah, M.P.
dc.contributor.authorSpencer, S.J.
dc.contributor.authorBensebaa, F.
dc.contributor.authorVickridge, I.
dc.contributor.authorDanzebrink, H.
dc.contributor.authorKrumrey, M.
dc.contributor.authorGross, T.
dc.contributor.authorOesterle, W.
dc.contributor.authorWendler, E.
dc.contributor.authorRheinländer, B.
dc.contributor.authorAzuma, Y.
dc.contributor.authorKojima, I.
dc.contributor.authorSuzuki, N.
dc.contributor.authorSuzuki, M.
dc.contributor.authorTanuma, S.
dc.contributor.authorMoon, D.W.
dc.contributor.authorLee, H.J.
dc.contributor.authorCho, H.M.
dc.contributor.authorChen, H.Y.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorPan, J.S.
dc.contributor.authorJordaan, W.A.
dc.contributor.authorHauert, R.
dc.contributor.authorKlotz, U.
dc.contributor.authorVan Der Marel, C.
dc.contributor.authorVerheijen, M.
dc.contributor.authorTamminga, Y.
dc.contributor.authorJeynes, C.
dc.contributor.authorBailey, P.
dc.contributor.authorBiswas, S.
dc.contributor.authorFalke, U.
dc.contributor.authorNguyen, N.V.
dc.contributor.authorChandler-Horowitz, D.
dc.contributor.authorEhrstein, J.R.
dc.contributor.authorMuller, D.
dc.contributor.authorDura, J.A.
dc.date.accessioned2014-10-16T09:19:47Z
dc.date.available2014-10-16T09:19:47Z
dc.date.issued2004-09
dc.identifier.citationSeah, M.P., Spencer, S.J., Bensebaa, F., Vickridge, I., Danzebrink, H., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D.W., Lee, H.J., Cho, H.M., Chen, H.Y., Wee, A.T.S., Osipowicz, T., Pan, J.S., Jordaan, W.A., Hauert, R., Klotz, U., Van Der Marel, C., Verheijen, M., Tamminga, Y., Jeynes, C., Bailey, P., Biswas, S., Falke, U., Nguyen, N.V., Chandler-Horowitz, D., Ehrstein, J.R., Muller, D., Dura, J.A. (2004-09). Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: Results of a CCQM pilot study. Surface and Interface Analysis 36 (9) : 1269-1303. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.1909
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96128
dc.description.abstractA study was carried out for the measurement of ultrathin SiO 2 on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/sia.1909
dc.sourceScopus
dc.subjectCalibration
dc.subjectEllipsometry
dc.subjectGate oxides
dc.subjectGIXRR
dc.subjectInterlaboratory study
dc.subjectMEIS
dc.subjectNeutron reflectometry
dc.subjectNRA
dc.subjectRBS
dc.subjectSilicon dioxide
dc.subjectSIMS
dc.subjectTEM
dc.subjectThickness measurement
dc.subjectTraceability
dc.subjectXPS
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/sia.1909
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume36
dc.description.issue9
dc.description.page1269-1303
dc.description.codenSIAND
dc.identifier.isiut000224171100001
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