Please use this identifier to cite or link to this item:;2-6
Title: Compositional and morphological analysis of InxGa1-xN/GaN epilayers
Authors: Li, K.
Wee, A.T.S. 
Lin, J. 
Feng, Z.C. 
Lau, E.W.P.
Issue Date: 1999
Citation: Li, K.,Wee, A.T.S.,Lin, J.,Feng, Z.C.,Lau, E.W.P. (1999). Compositional and morphological analysis of InxGa1-xN/GaN epilayers. Surface and Interface Analysis 28 (1) : 181-185. ScholarBank@NUS Repository.;2-6
Abstract: The compositional and surface morphological properties of InxGa1-xN epilayers with different indium content grown on GaN sublayers have been studied by x-ray diffraction (XRD), RBS, XPS and atomic force microscopy (AFM). The InxGa1-xN epilayers were grown on GaN by metal-organic chemical vapour deposition. Reliable x values, ranging from 0.10±0.01 to 0.22±0.01, were determined by complementary XRD and RBS investigations, and no bulk phase segregation was found by XRD. The thickness of InxGa1-xN epilayers was determined by RBS to be between 70 and 260 nm. In contrast to the lack of phase segregation of InxGa1-xN in the bulk, surface In-Ga alloy species were detected by XPS even at low indium content (x to approximately 10%), and the amount of this species increases with indium content. Indium content was also found by AFM to have a significant influence on the surface morphologies of InxGa1-xN. The surface root-mean-square roughness increased from 0.82 nm at x = 0.10 to 9.0 nm at x = 0.23.
Source Title: Surface and Interface Analysis
ISSN: 01422421
DOI: 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-6
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