Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1412269
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dc.titleCoexisting photoluminescence of Si and Ge nanocrystals in Ge/Si thin film
dc.contributor.authorZhu, Y.
dc.contributor.authorYuan, C.L.
dc.contributor.authorQuek, S.L.
dc.contributor.authorChan, S.S.
dc.contributor.authorOng, P.P.
dc.contributor.authorLi, Q.T.
dc.date.accessioned2014-10-16T09:18:25Z
dc.date.available2014-10-16T09:18:25Z
dc.date.issued2001-11-15
dc.identifier.citationZhu, Y., Yuan, C.L., Quek, S.L., Chan, S.S., Ong, P.P., Li, Q.T. (2001-11-15). Coexisting photoluminescence of Si and Ge nanocrystals in Ge/Si thin film. Journal of Applied Physics 90 (10) : 5318-5321. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1412269
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96007
dc.description.abstractThin films of composite germanium/silicon (Ge/Si) were prepared by pulsed laser ablation alternately on Ge and Si materials on a rotary target, followed by vacuum deposition of the ablated materials on an ultraclean glass substrate. X-ray diffraction and atomic force microscopy phase analysis confirmed that the film structure consisted of a mixture of Si and Ge nanoparticles which could exist in two possible phases. Most of the particles are of less than 30 nm in diameter even after the sample was annealed at 500 °C for 6 h. With different excitation light of wavelengths 280 and 380 nm the composite film yielded independent photoluminescence emissions corresponding, respectively, to the Si and Ge nanoparticles which did not interfere with each other. These results demonstrate that there was very little interaction between the Si and Ge emissions arising from their coexisting mixture in the thin film, even after high temperature annealing of the film in the atmosphere. It opens up the possibility for application of the Si/Ge composite film in multiple function optoelectronic devices. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1412269
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1412269
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume90
dc.description.issue10
dc.description.page5318-5321
dc.description.codenJAPIA
dc.identifier.isiut000171918700069
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