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Please use this identifier to cite or link to this item: https://doi.org/10.1088/1742-6596/61/1/266
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dc.titleBEEM studies on metal high K-dielectric HfO2 interfaces
dc.contributor.authorZheng, Y.
dc.contributor.authorTroadec, C.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorPey, K.L.
dc.contributor.authorO'Shea, S.J.
dc.contributor.authorChandrasekhar, N.
dc.date.accessioned2014-10-16T09:16:42Z
dc.date.available2014-10-16T09:16:42Z
dc.date.issued2007-04-01
dc.identifier.citationZheng, Y., Troadec, C., Wee, A.T.S., Pey, K.L., O'Shea, S.J., Chandrasekhar, N. (2007-04-01). BEEM studies on metal high K-dielectric HfO2 interfaces. Journal of Physics: Conference Series 61 (1) : 1347-1351. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/61/1/266
dc.identifier.issn17426588
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95860
dc.description.abstractIn this work, we present an investigation of the Pt and Pd-HfO 2-p-Si interfaces using ballistic electron emission microscopy. The band alignment of the Pt-HfO2-p-Si structure is inferred. The potential drop in the oxide has been determined. Oscillations in the collector current with increasing bias enable estimation of the effective mass of electrons in HfO2 in the range of 0.35-0.44 m0. Stressing studies indicate modest resistance to stressing, with a threshold of 0.5 nC for damage to the base/oxide. Our work is the first successful application of the BEEM technique to metal-high K dielectric interfaces. © 2007 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/1742-6596/61/1/266
dc.description.sourcetitleJournal of Physics: Conference Series
dc.description.volume61
dc.description.issue1
dc.description.page1347-1351
dc.identifier.isiut000291445400266
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